Etchant formulation for selectively removing thin films in...

Details Etchant formulation for selectively removing thin films in... Etchant formulation for selectively removing thin films in...

2006-08-08

2006-08-08

Nguyen, Thanh (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Bump leads

C257S738000, C257S778000, C257S780000

Reexamination Certificate

active

07087996

ABSTRACT:
The invention relates to a ball-limiting metallurgy (BLM) etching system and process. The BLM stack is provided for an electrical device that contains an aluminum layer disposed upon a metal first layer. A metal upper layer is disposed above the metal second layer, and an alternative metal third layer is disposed between the metal second layer and the metal upper layer. The etching system and process utilizes an etching solution that includes a nitrogen-containing heterocyclic compound, an ammonium hydroxide compound, an oxidizer, and a metal halide compound. Etching conditions prevent any metallization that is dissolved from redepositing, thus avoiding lowered yields.

REFERENCES:
patent: 5211807 (1993-05-01), Yee
patent: 5223087 (1993-06-01), Itani et al.
patent: 5259888 (1993-11-01), McCoy
patent: 5462638 (1995-10-01), Datta et al.
patent: 5869130 (1999-02-01), Ferrier
patent: 6054061 (2000-04-01), Bayes et al.
patent: 6083419 (2000-07-01), Grumbine et al.
patent: 6130170 (2000-10-01), David et al.
patent: 6136711 (2000-10-01), Grumbine et al.
patent: 6238589 (2001-05-01), Cooper et al.
patent: 6293457 (2001-09-01), Srivastava et al.
patent: 6538323 (2003-03-01), Sakata et al.
patent: WO-96/19097 (1996-06-01), None
Lipetzky, Pete , “Refractory Metals: A Primer”,Journal of Metals, The Metallurgical Society, (Mar. 2002), 47-49.

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