Etching a substrate: processes – Nongaseous phase etching of substrate – With measuring – testing – or inspecting
Patent
1997-08-11
1999-10-26
Powell, William
Etching a substrate: processes
Nongaseous phase etching of substrate
With measuring, testing, or inspecting
216 93, 216 99, 134 13, 438 10, B44C 122
Patent
active
059722363
ABSTRACT:
A silicon substance is etched by using alkaline etchant containing additive (Cu, Pb, Mg). The content of the additive is controlled intentionally to provide desired etching quality during an etching operation.
REFERENCES:
patent: 4859280 (1989-08-01), Lowry et al.
"Influence of Metallic Impurities On SC-1 Cleaning", Sugihara et. al., Semicond. Pure H.sub.2 O Chem. Conference (1993), 12th, Abstract only.
"Determination of Trace Elements by Stripping Voltammetry"; Shaneshwar et. al., 1983, Trace Anal. Tech. Dev.
"Influence of Metallic Impurities on SC-1 Cleaning", Semiconductor Pure Water Chem Conf; 12th; pp. 66-81; Sugihara et. al, 1993.
Nakamura et al: "Novel Electrochemical Micro-Machining and Its Application for Semiconductor Acceleration Sensor IC" Transducers 1987, pp. 112-115.
Abe Yoshitsugu
Inoue Kazuyuki
Ito Motoki
Kosaka Satoru
Tanaka Hiroshi
Denso Corporation
Goudreau George
Powell William
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