Etchant composition and manufacturing method for thin film...

Etching a substrate: processes – Forming or treating article containing a liquid crystal...

Reexamination Certificate

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Details

C216S024000, C216S083000, C216S095000, C216S100000, C216S101000, C216S108000, C438S099000, C438S151000

Reexamination Certificate

active

07635436

ABSTRACT:
The present invention provides an etchant composition containing 60 to 75 wt % of phosphoric acid (H3PO4), 0.5 to 15 wt % of nitric acid (HNO3), 2 to 15 wt % of acetic acid (CH3COOH), and 0.1 to 15 wt % of aluminum nitrate (Al(NO3)3).

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