Etching a substrate: processes – Forming or treating article containing a liquid crystal...
Reexamination Certificate
2005-11-10
2009-12-22
Alanko, Anita K (Department: 1792)
Etching a substrate: processes
Forming or treating article containing a liquid crystal...
C216S024000, C216S083000, C216S095000, C216S100000, C216S101000, C216S108000, C438S099000, C438S151000
Reexamination Certificate
active
07635436
ABSTRACT:
The present invention provides an etchant composition containing 60 to 75 wt % of phosphoric acid (H3PO4), 0.5 to 15 wt % of nitric acid (HNO3), 2 to 15 wt % of acetic acid (CH3COOH), and 0.1 to 15 wt % of aluminum nitrate (Al(NO3)3).
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Kim Kyu-Sang
Lim Kwan-Tack
Alanko Anita K
F. Chau & Associates LLC
Samsung Elctronics Co., Ltd.
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