Etching a substrate: processes – Nongaseous phase etching of substrate – Etching inorganic substrate
Reexamination Certificate
2007-10-23
2007-10-23
Kackar, Ram N. (Department: 1763)
Etching a substrate: processes
Nongaseous phase etching of substrate
Etching inorganic substrate
C216S018000, C216S075000, C216S077000, C216S078000, C216S103000, C216S106000, C252S079100, C252S079200
Reexamination Certificate
active
10979267
ABSTRACT:
An etchant of the present invention includes an aqueous solution containing hydrochloric acid, nitric acid, and a cupric ion source. An etching method of the present invention includes bringing the etchant into contact with at least one metal selected from nickel, chromium, nickel-chromium alloys, and palladium. Another etching method of the present invention includes bringing a first etchant that includes an aqueous solution containing at least the following components A to C (A. hydrochloric acid; B. at least one compound selected from the following (a) to (c): (a) compounds with 7 or less carbon atoms, containing a sulfur atom(s) and at least one group selected from an amino group, an imino group, a carboxyl group, a carbonyl group, and a hydroxyl group; (b) thiazole; and (c) thiazole compounds; and C. a surfactant) into contact with a surface of the metal, and then bringing a second solution that includes an aqueous solution containing hydrochloric acid, nitric acid, and a cupric ion source into contact with the surface of the metal. According to the etchant and the etching methods of the present invention, it is possible to etch at least one metal selected from nickel, chromium, nickel-chromium alloys, and palladium quickly and suppress excessive dissolution of copper.
REFERENCES:
patent: 4868071 (1989-09-01), Walsh et al.
patent: 5294291 (1994-03-01), Akahoshi et al.
patent: 6156221 (2000-12-01), Lauffer et al.
patent: 6841084 (2005-01-01), Lillie et al.
patent: 2002/0125215 (2002-09-01), Davis et al.
patent: 100 39 684 (2000-08-01), None
patent: 52077839 (1977-06-01), None
patent: 2000-252625 (2000-09-01), None
patent: 2005023340 (2005-01-01), None
patent: 2006324362 (2006-11-01), None
Akiyama Daisaku
Kuriyama Masayo
Ogushi Ryo
Urushibata Kaoru
Bernard Viji Narasimhan
Hamre Schumann Mueller & Larson P.C.
Kackar Ram N.
MEC Company Ltd.
LandOfFree
Etchant and replenishment solution therefor, and etching... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Etchant and replenishment solution therefor, and etching..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etchant and replenishment solution therefor, and etching... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3829732