Etch stop useful in avoiding substrate pitting with poly buffere

Details Etch stop useful in avoiding substrate pitting with poly buffere Etch stop useful in avoiding substrate pitting with poly buffere

1993-02-11

1994-10-25

Thomas, Tom

Fishing, trapping, and vermin destroying

437 69, 437920, 437978, 148DIG156, H01L 2176

Patent

active

053588924

ABSTRACT:
Active regions on a semiconductor substrate are isolated, whereby an Oxide/Nitride/Oxide sandwich is disposed on a substrate, and a polysilicon layer and a nitride layer are also disposed thereon. The Oxide/Nitride/Oxide sandwich substantially inhibits "pitting" of the substrate when the polysilicon layer is removed.
Method of preventing "pitting" of an underlying substrate through the use of a nitride (or other HF-resistant material) disposed beneath the polysilicon layer of a Poly Buffered LOCOS stack.

REFERENCES:
patent: 4541167 (1985-09-01), Havemann
patent: 4868136 (1989-09-01), Ravagua
Ghandhi, "VLSI Fabrication Principles", 1983, pp. 479-482 and pp. 495-497.
Toshiyuki Nishihara et al., "A 0.5 um Isolation Technology Using Advanced Poly Silicon Pad LOCOS (APPL)", IEEE, 1988, pp. 100-103.
H. S. Yang et al., "Poly void Formation in Poly Buffer LOCOS Process", Extended Abstracts of the Spring Electrochemical Society meeting, 1992, p. 442.
J. M. Sung, "The Impact of Poly-Removal Techniques on Thin Thermal Oxide Property in Poly-Buffer LOCOS Technology", IEEE Transactions on Electron Devices, Aug. 1991, pp. 1970-1973.
Stanley Wolf, "A Review of IC Isolation Technologies--Part 6", Solid State Technology, Dec. 1992, pp. 39-41.
R. L. Guldi, "Characterization of Poly-Buffered LOCOS in Manufacturing Environment", J. Electrochem. Soc., Dec. 1989, pp. 3815-3820.
Tin-hwang Lin, "Twin-White-Ribbon Effect and Pit Formation Mechanism in PBLOCOS", J. Electrochem. Soc., Jul. 1991, pp. 2145-2149.
M. Ghezzo, "LOPOS: Advanced Device Isolation for a 0.8 um CMOS/BULK Process Technology", Journal of The Electrochemical Society, Jul. 1989, pp. 1992-1996.

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