Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2004-11-18
2008-08-12
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S414000, C257S421000
Reexamination Certificate
active
07411264
ABSTRACT:
The present invention provides a thin-film structure that includes an etch-stop layer having a first side and a second side, a patterned compensation layer for dissipating thermal energy, and an etch-vulnerable layer, where the etch-stop layer substantially impedes etching. The patterned compensation layer is adjacent the first side of the etch-stop layer, and the etch-vulnerable layer is adjacent the second side of the etch-stop layer.
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Kamarajugadda Mallika
Kautzky Michael C.
Natarajun Arun
Seets David C.
Wakham Stacy C.
Kinney & Lange PA
Pham Long
Seagate Technology LLC
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