Etch stop layer using polymers for integrated circuits

Details Etch stop layer using polymers for integrated circuits Etch stop layer using polymers for integrated circuits

1993-01-11

1995-03-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437203, 437228, 437235, 437238, H01L 2144

Patent

active

053957962

ABSTRACT:
An etch stop layer (22) for permitting distinguishing between two similar layers (20, 24), such as two oxide layers, during etching is provided. The etch stop layer comprises a silicon-oxyhalide polymer, preferably a silicon-oxyfluoride polymer. Use of the polymer as an etch stop layer permits closer placement of metal conductor surfaces (12, 12') and contacts (14').

REFERENCES:
patent: 3625749 (1967-03-01), Yoshioka
patent: 3660156 (1972-05-01), Schmidt
patent: 4004044 (1977-01-01), Franco et al.
patent: 4832789 (1989-05-01), Cochran et al.
patent: 4886573 (1989-12-01), Watanabe et al.
patent: 4961822 (1990-10-01), Liao et al.
patent: 5037506 (1991-08-01), Gupta et al.

Affiliated with

Also associated with

Rating

Etch stop layer using polymers for integrated circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Etch stop layer using polymers for integrated circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etch stop layer using polymers for integrated circuits will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1405846