Etch stop layer using polymers

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428428, 428429, 428446, 428447, 428701, B32B 3300

Patent

active

051982986

ABSTRACT:
An etch stop player (22) for permitting distinguishing between two similar layers (20, 24), such as two oxide layers, during etching is provided. The etch stop layer comprises a silicon-oxyhalide polymer, preferably a silicon-oxyfluoride polymer. Use of the polymer as an etch stop layer permits closer placement of metal conductor surfaces (12, 12') and contacts (14').

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