Etch stop layer system

Details Etch stop layer system Etch stop layer system

2007-06-05

2007-06-05

Owens, Douglas W. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S190000, C438S285000, C438S590000

Reexamination Certificate

active

10603852

ABSTRACT:
A semiconductor structure including a uniform etch-stop layer. The uniform etch stop layer has a relative etch rate which is less than approximately the relative etch rate of Si doped with 7×1019boron atoms/cm3. A method for forming a semiconductor structure includes forming a uniform etch-stop layer providing a handle wafer, and bonding the uniform etch-stop layer to the handle wafer. The uniform etch-stop layer has a relative etch rate which is less than approximately the relative etch rate of Si doped with 7×1019boron atoms/cm3.

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