Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2006-06-06
2006-06-06
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C438S623000
Reexamination Certificate
active
07057289
ABSTRACT:
An interconnect structure with a plurality of low dielectric constant insulating layers acting as etch stops is disclosed. The low dielectric constant materials act as insulating layers through which trenches and vias are subsequently formed by employing a timed etching. Since the low dielectric constant materials are selected so that the etchant available for each one has only a small etch rate relative to the other low dielectric constant materials, the plurality of low dielectric constant materials act as etch stops during the fabrication of interconnect structures. This way, the etch stop layers employed in the prior art are eliminated and the number of fabrication steps is reduced.
REFERENCES:
patent: 5485038 (1996-01-01), Licari et al.
patent: 5811352 (1998-09-01), Numata et al.
patent: 6187661 (2001-02-01), Lou
patent: 6211561 (2001-04-01), Zhao
patent: 6239494 (2001-05-01), Besser et al.
patent: 6245662 (2001-06-01), Naik et al.
patent: 6333258 (2001-12-01), Miyata et al.
patent: 6593246 (2003-07-01), Hasegawa et al.
patent: 6593251 (2003-07-01), Baklanov et al.
“Stopper-less Hybrid Low-k/Cu DD structure fabrication combined with Low-k CMP” by T. Usami et al., Proc. 2000 International Interconnect Technology Conference, pp. 250-252.
“Hybrid Porous and Dense Dielectric Stacks— BEOL Process Integration for 65 and 45 nm nodes” by D. Frye et. al., 2005 VMIS Conference, pp. 47-50.
Dickstein , Shapiro, Morin & Oshinsky, LLP
Micro)n Technology, Inc.
Vu David
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