Etch stop for use in etching of silicon oxide

Details Etch stop for use in etching of silicon oxide Etch stop for use in etching of silicon oxide

1997-05-05

2000-01-11

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257607, 438970, H01L 2358

Patent

active

060139439

ABSTRACT:
A etch stop layer for use in a silicon oxide dry fluorine etch process is made of silicon nitride with hydrogen incorporated in it either in the form of N--H bonds, O--H bonds, or entrapped free hydrogen. The etch stop layer is made by either increasing the NH.sub.3 flow, decreasing the SiH.sub.4 flow, decreasing the nitrogen flow, or all three, in a standard PECVD silicon nitride fabrication process. The etch stop can alternatively be made by pulsing the RF field in either a PECVD process or an LPCVD process.

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