Etch resistant wafer processing apparatus and method for...

Details Etch resistant wafer processing apparatus and method for... Etch resistant wafer processing apparatus and method for...

2005-12-30

2008-11-04

Fuqua, Shawntina (Department: 3742)

Electric heating

Heating devices

Combined with container, enclosure, or support for material...

C219S385000, C219S411000, C219S405000, C118S500000, C118S724000, C118S725000, C118S728000, C118S730000, C361S233000, C361S234000, C269S903000, C279S128000, C257S632000

Reexamination Certificate

active

07446284

ABSTRACT:
A wafer processing apparatus is fabricated by depositing a film electrode onto the surface of a base substrate, the structure is then overcoated with a protective coating film layer comprising at least one of a nitride, carbide, carbonitride or oxynitride of elements selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and combinations thereof. The film electrode has a coefficient of thermal expansion (CTE) that closely matches the CTE of the underlying base substrate layer as well as the CTE of the protective coating layer.

REFERENCES:
patent: 4960734 (1990-10-01), Kanai
patent: 5280156 (1994-01-01), Niori et al.
patent: 5663865 (1997-09-01), Kawada et al.
patent: 6744618 (2004-06-01), Divakar et al.
patent: 07-153820 (1995-06-01), None
patent: 1999-040330 (1999-12-01), None

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