Etch resistant oxide mask formed by low temperature and low ener

Details Etch resistant oxide mask formed by low temperature and low ener Etch resistant oxide mask formed by low temperature and low ener

1989-04-12

1990-08-14

Pianalto, Bernard

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 58, 427259, 427264, 427265, B05D 306

Patent

active

049486241

ABSTRACT:
A method of forming oxide masks in silicon in which oxygen ions are implanted into the silicon.

REFERENCES:
patent: 3622382 (1971-11-01), Karl
patent: 4679303 (1987-07-01), Chen et al.
patent: 4680854 (1987-07-01), Ho et al.

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