Etch-resistant film, forming method thereof,...

Details Etch-resistant film, forming method thereof,... Etch-resistant film, forming method thereof,...

2005-08-18

2008-11-25

Hendricks, Keith D. (Department: 1794)

Semiconductor device manufacturing: process

Chemical etching

C216S067000

Reexamination Certificate

active

07456103

ABSTRACT:
The present invention provides a surface-modified resist pattern which contains a resist pattern having low etch resistance by itself but having a modified and etch-resistant surface and is suitable for fine and high-definition patterning, and a method for efficiently forming the same. The method forms a surface-modified resist pattern having an etch-resistant surface by selectively depositing an organic compound on a resist pattern. The deposition is preferably carried out by using plasma of a gas. The method preferably includes arranging the organic compound so as to face the resist pattern, the organic compound having been deposited on a base material, and depositing the organic compound onto the resist pattern. The plasma of the gas is preferably introduced from an opposite side of the base material to the organic compound deposited thereon.

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