Etch residue clean

Details Etch residue clean Etch residue clean

1997-09-17

2000-01-11

Powell, William

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

438704, 438974, 438963, 438906, 438629, 438637, 438640, 438696, 438750, H01L 21302, B08B 600

Patent

active

060124695

ABSTRACT:
A method for cleaning polymer film residues from in-process integrated circuit devices is disclosed. Specifically, a method for forming a contact via in an integrated circuit is disclosed in which the formation of a metallization conductive element is exposed through a dry anisotropic etch. During the etch, a polymer film residue forms from masking materials, and coats the newly-formed via. The polymer film may have metals incorporated metals therein from the metallization conductive element. A fluorine based etchant is used to remove the polymer film. Protection of the metallization conductive element during the cleaning process is accomplished with passivation additives comprising straight, branched, cyclic, and aromatic hydrocarbons. Attached to the hydrocarbons are functional groups comprising at least 3 hydroxyls.

REFERENCES:
patent: 4569722 (1986-02-01), Maury et al.
patent: 5320709 (1994-06-01), Bowden et al.
patent: 5412868 (1995-05-01), Nguyen et al.
patent: 5567574 (1996-10-01), Hasemi et al.
patent: 5630904 (1997-05-01), Aoyama et al.

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