Etch process to produce rounded top corners for sub-micron silic

Details Etch process to produce rounded top corners for sub-micron silic Etch process to produce rounded top corners for sub-micron silic

1996-12-31

1998-12-01

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438723, 438724, 438734, 438719, H01L 21302

Patent

active

058438467

ABSTRACT:
The present invention describes a method for rounding the top corners of a sub-micron trench in a semiconductor device directly after trench formation. In one embodiment of the present invention the etch process uses an etchant made up of a carbon-fluorine gas, an argon gas, and a nitrogen gas. The combination of gases enables the rounding of the top corners of the trench directly after the trench is formed. The combination of the carbon-fluorine and nitrogen gases etch back the silicon nitride and stress relief oxide layers in order to expose the top corners of the trench. As the top corners of the substrate are exposed the nitrogen and argon gases sputter the top corners rounding them as the etch process completes the trench.

REFERENCES:
patent: 5176790 (1993-01-01), Arleo et al.
patent: 5269879 (1993-12-01), Rhoades et al.
patent: 5453403 (1995-09-01), Meng et al.
patent: 5468339 (1995-11-01), Gupta et al.
patent: 5514247 (1996-05-01), Shan et al.
patent: 5668038 (1997-09-01), Huang et al.
"Silicon Deep--Trench Etching Using Freon 12 Plus Inert Gas Plasmas"; Bennett et. al.; Jan. 1985; IBM Tech. Discl. Bulletin; vol. 27, No. 8; pp. 4680-4681.

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