Etch process employing asymmetric bipolar pulsed DC

Details Etch process employing asymmetric bipolar pulsed DC Etch process employing asymmetric bipolar pulsed DC

1996-02-12

1998-06-23

Kunemund, Robert

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

20419232, 20419212, 20429808, C23C 1434

Patent

active

057700230

ABSTRACT:
An asymmetric bipolar plasma etching process is employed for etching a workpiece positioned within a plasma chamber, to prepare the workpiece for a subsequent coating process. The etching process involves applying a negative high voltage to the workpiece, relative to an anode portion of the chamber. Pulses of a positive voltage are applied to the workpiece at a predetermined pulse width and a predetermined level relative to the anode, so that the applied voltage appears as a train of asymmetric bipolar pulses. The waveform has a major negative-going portion and a minor positive-going portion. The negative-going portion can have a voltage of minus 300 to minus 4,000 volts, and the positive-going pulses can have a voltage of plus 50 to plus 300 volts, and a typical pulse width between about 0.25 and 3 microseconds. The etching process can be followed by a sputter coating process in the same chamber. Another coating technique could also be used.

REFERENCES:
patent: 4693805 (1987-09-01), Quazi
patent: 5102687 (1992-04-01), Pelletier et al.
patent: 5303139 (1994-04-01), Mark
patent: 5346600 (1994-09-01), Nieh et al.
Sellers, "Asymmetric Bipolar Pulsed DC", ENI Tech Note, pp. 1-8, Feb. 1992.

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