Etching a substrate: processes – Nongaseous phase etching of substrate – With measuring – testing – or inspecting
Patent
1996-04-16
1998-08-04
Codd, Bernard P.
Etching a substrate: processes
Nongaseous phase etching of substrate
With measuring, testing, or inspecting
216 83, 216 97, 216 99, 438745, C23F 100, C25F 300
Patent
active
057888710
ABSTRACT:
A wet-etching method which determines a desired etch-ended point includes the steps of providing an etchant solution in a bath, performing the wet-etch process by dipping a material to be etched in the bath, measuring a weight variation value of the material during the wet etch process, calculating a thickness variation value of the material by using the weight variation value, and stopping the wet-etch process when the thickness variation value reaches a preset value.
REFERENCES:
patent: 3923567 (1975-12-01), Lawrence
patent: 5329124 (1994-07-01), Yamamoto
Masterton et al., "Chemical Principles with Qualitative Analysis", p. 457, 1978.
Codd Bernard P.
LG Semicon Co. Ltd.
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