Etch compositions and methods of processing a substrate

Details Etch compositions and methods of processing a substrate Etch compositions and methods of processing a substrate

2007-03-01

2009-12-08

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S689000, C438S704000, C257SE21219, C257SE21223, C257SE21309, C216S083000, C216S108000, C216S109000, C252S079100, C252S079200

Reexamination Certificate

active

07629266

ABSTRACT:
The invention includes an etchant composition containing isopropyl alcohol and one or more of HF, NH4F and tetramethyl ammonium fluoride (TMAF). The invention encompasses a method of processing a substrate. A substrate is provided which has a first material containing at least one of polysilicon, monocrystalline silicon and amorphous silicon, and a second material. The substrate is exposed to an etch composition which comprises isopropyl alcohol and at least one of HF, NH4F and TMAF. The invention includes a method of processing a semiconductor construction including providing a construction which has a capacitor electrode material and an oxide material along at least a portion of the capacitor electrode material. At least some of the oxide material is removed by isotropic etching utilizing an etchant composition comprising isopropyl alcohol.

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