Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2005-07-27
2009-02-17
Hendricks, Keith D. (Department: 1794)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C216S083000
Reexamination Certificate
active
07491650
ABSTRACT:
The invention includes an etchant composition containing isopropyl alcohol and one or more of HF, NH4F and tetramethyl ammonium fluoride (TMAF). The invention encompasses a method of processing a substrate. A substrate is provided which has a first material containing at least one of polysilicon, monocrystalline silicon and amorphous silicon, and a second material. The substrate is exposed to an etch composition which comprises isopropyl alcohol and at least one of HF, NH4F and TMAF. The invention includes a method of processing a semiconductor construction including providing a construction which has a capacitor electrode material and an oxide material along at least a portion of the capacitor electrode material. At least some of the oxide material is removed by isotropic etching utilizing an etchant composition comprising isopropyl alcohol.
REFERENCES:
patent: 5340437 (1994-08-01), Erk et al.
patent: 5656097 (1997-08-01), Olesen et al.
patent: 5928969 (1999-07-01), Li et al.
patent: 5960289 (1999-09-01), Tsui et al.
patent: 6204106 (2001-03-01), Gonzalez
patent: 6252276 (2001-06-01), Ramsbey et al.
patent: 6573175 (2003-06-01), Yin et al.
patent: 6579766 (2003-06-01), Tews et al.
patent: 6703319 (2004-03-01), Yates et al.
patent: 6807824 (2004-10-01), Miwa
patent: 7052627 (2006-05-01), Kezuka et al.
patent: 2003/0042526 (2003-03-01), Weimer
patent: 2004/0245644 (2004-12-01), Yin et al.
Kang et al. (Selectivity Investigation of HfO2 to Oxide using Wet Etching; 2004 IEEE).
BYU (http://www.ee.byu.edu/cleanroom/everything—wafers.phtml).
Motorola Corporation (Surface Cleaning and Wet processing; 1999 Arizona Board of regents for the University of Arizona).
Bertagna et al., “Corrosion Rate of n- and p- Silicon Substrates in HF, HF + HCI, and HF + NH4F Aqueous Solutions”, J. Electrochem. Soc., 1999, pp. 83-90, vol. 146(1).
Bertagna et al., “Ionic components dependence of the charge transfer reactions at the silicon/HF solution interface”, J. Solid State Electrochem, Mar. 1999, pp. 42-51, vol. 4.
Bertagna et al., “Electrochemical and Radiochemical Study of Copper Contamination Mechanism from HF Solutions onto Silicon Substrates”, Electrochemical Society Proceedings, pp. 128-135, vol. 97-35. (1998).
Schnabel et al., “Photoelectrochemical characterization p- and n-doped single crystalline silicon carbide and photoinduced reductive dehalogenation of organic pollutants at p-doped silicon carbide”, Electrochimica Acta , Feb. 2001, pp. 719-727, vol. 47.
Garrido et al., “The Role of Chemical Species in the Passivation of <100 > Silicon Surfaces by HF in Water-Ethanol Solutions”, J. Electrochem. Soc., Dec. 1996, pp. 4059-4066, vol. 143 No. 12.
Allison Wood, “Etching Silicon Nitride and Silicon Oxide Using Ethylene Glycol/Hydrofluoric Acid Mixtures”, Electrochemical Society Proceedings, vol. 97-36, pp. 258-263.
Deckert, “Pattern Etching of CVD Si3N4/SiO2 Composites in HF/Glycerol Mixtures”, J. Electrochem. Soc., Nov. 1980, pp. 2433-2438.
Knotter et al., “Etching Mechanism of Silicon Nitride in HF-Based Solutions”, J. Electrochem. Soc., 2001, pp. F43-46, vol. 148(3).
Kezuka et al., “The Control of Etching Rate for Various SiO2 Films”, Electrochemical Society Proceedings, 2000, pp. 244-251, vol. 99-36.
Fucsko Janos
Raghu Prashant
Waldo Grady S.
Wiggins Joseph
George Patricia A
Hendricks Keith D.
Micro)n Technology, Inc.
Wells St. John P.S.
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