Etch chamber with gas dispersing membrane

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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1566461, B05C 500

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active

054587247

ABSTRACT:
Processing gases in an etching chamber for semiconductor wafers are dispersed by a porous plastic membrane interposed between the source of gases and the wafer being processed. A peripheral outlet in the chamber wall exhausting gases is also traversed by a porous plastic membrane.

REFERENCES:
patent: 4094722 (1978-06-01), Yamamoto et al.
patent: 4119881 (1978-10-01), Calderon
patent: 4134817 (1979-01-01), Bourdon
patent: 4148705 (1979-04-01), Battey et al.
patent: 4209357 (1980-06-01), Gorin et al.
patent: 4230515 (1980-10-01), Zajec
patent: 4313783 (1982-02-01), Davies et al.
patent: 4534816 (1985-08-01), Chen et al.
patent: 4540466 (1985-09-01), Nishizawa
patent: 4544446 (1985-10-01), Cady
patent: 4565601 (1986-01-01), Kakehi et al.
patent: 4579618 (1986-04-01), Celestino et al.
patent: 4590042 (1986-05-01), Drage
patent: 4595484 (1986-06-01), Giammarco et al.
patent: 4600464 (1986-07-01), Desilets et al.
patent: 4612077 (1986-09-01), Tracy et al.
patent: 4624214 (1986-11-01), Suzuki et al.
patent: 4631105 (1986-12-01), Carroll et al.
patent: 4664747 (1987-05-01), Sekiguchi et al.
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 4780169 (1988-10-01), Stark et al.
patent: 4792378 (1988-12-01), Rose et al.
patent: 4820371 (1989-04-01), Rose
patent: 4846928 (1989-07-01), Dolins et al.
patent: 4857142 (1989-08-01), Syverson
patent: 4859277 (1989-08-01), Barna et al.
Laboratory Membrane Filtration, Millipore Membrane Filtration Technology, date unknown, originating with Millapore Corporation, 80 Ashby Road, Bedford, Massachusetts 01730.
Application SN 020,473, Filed Mar. 2, 1987, Process Chamber for HF Vapor Etching, pp. 1-20.
H. M. Gartner, et al., "Selective Etch Rate Control Technique in Reactive Ion Etching", IBM Technical Disclosure Bulletin, vol. 21, No. 3, Aug. 1978, pp. 1032, 1033.
A. Lanzaro, "Individual Wafer Etch-Rate Control in Batch Reactor", IBM Technical Disclosure Bulletin, vol. 22, No. 3, Aug. 1979, pp. 1008, 1009.

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