Electricity: electrical systems and devices – Safety and protection of systems and devices – Load shunting by fault responsive means
Reexamination Certificate
2009-06-10
2011-12-06
Fureman, Jared (Department: 2836)
Electricity: electrical systems and devices
Safety and protection of systems and devices
Load shunting by fault responsive means
Reexamination Certificate
active
08072721
ABSTRACT:
An electro-static-discharge (ESD) protection circuit protects core transistors. An internal node to the gate of an n-channel output transistor connects to the drain of an n-channel gate-grounding transistor to ground. The gate of the gate-grounding transistor is a coupled-gate node that is coupled by an ESD coupling capacitor to the output and to ground by an n-channel disabling transistor and a leaker resistor. The gate of the n-channel disabling transistor is connected to power and disables the ESD protection circuit when powered. An ESD pulse applied to the output is coupled through the ESD coupling capacitor to pulse high the coupled-gate node and turn on the gate-grounding transistor to ground the gate of the n-channel output transistor, which breaks down to shunt ESD current. The ESD pulse is prevented from coupling through a parasitic Miller capacitor of the n-channel output transistor by the gate-grounding transistor.
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Kwan Hing Kit
Kwong Kwok Kuen David
Ng Chik Wai David
So Wai Kit Victor
Auvinen Stuart T.
Fureman Jared
gPatent LLC
Hong Kong Applied Science and Technology Research Institute Co.
Willoughby Terrence
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