ESD protection transistors

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

357 238, 357 42, 357 43, 307310, 307317R, H01L 2978, H01L 2702, H01L 3100, H03K 326

Patent

active

047604336

ABSTRACT:
A protection circuit including complementary bipolar transistors having collectors connected to an input and base and emitters connected together to a respective voltage source. The bipolar transistors are lateral transistors having a field plate over the base region and spaced laterally from the laterally spaced collector and emitter regions. The base may include increased impurity surface regions extending from the emitter and collector to the gate to increase the beta and decrease the collector-base breakdown.

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