ESD protection of noise decoupling capacitors

Details ESD protection of noise decoupling capacitors ESD protection of noise decoupling capacitors

2005-08-23

2005-08-23

Jackson, Stephen W. (Department: 2836)

Electricity: electrical systems and devices

Safety and protection of systems and devices

Load shunting by fault responsive means

C361S058000, C361S111000, C361S118000

Reexamination Certificate

active

06934136

ABSTRACT:
Electrostatic discharge protection devices formed at a face of a semiconductor substrate, integrated with a component sensitive to electrostatic discharge, wherein the protection device is interdigitated with the component.The invention is applicable to many kinds of components, for example to a noise-decoupling capacitor shaped as an nMOS transistor with thin dielectric, or to an input buffer shaped as an nMOS transistor, or to an antenna shaped as an nMOS transistor. The protection device includes an nMOS transistor. The insulator of the gates, preferably silicon dioxide, is thin and in need of protection against ESD damage.The interdigitation may be configured in one or more planes. Further, the protection device may lie in a single plane spaced apart from the plane defined by the components. The protection device may also partially be merged with the component.

REFERENCES:
patent: 5955763 (1999-09-01), Lin
patent: 6501136 (2002-12-01), Lin
patent: 6538300 (2003-03-01), Goldberger et al.
patent: 6661273 (2003-12-01), Lai et al.

Affiliated with

Also associated with

Rating

ESD protection of noise decoupling capacitors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with ESD protection of noise decoupling capacitors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and ESD protection of noise decoupling capacitors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3464446