ESD protection network for IGFET circuits with SCR prevention gu

Details ESD protection network for IGFET circuits with SCR prevention gu ESD protection network for IGFET circuits with SCR prevention gu

1986-10-03

1988-07-12

James, Andrew J.

357 13, 357 52, H01L 2978

Patent

active

047573635

ABSTRACT:
An input resistor-diode protection circuit having an input resistor formed by a high impurity region within a deeper low impurity region, both a first conductivity type and input diode formed by the junction of the low impurity resistor region and the substrate along a substantial portion and a high impurity region overlapping the low impurity region at the output end of the resistor-diode circuit, both of a second conductivity type. A bipolar transistor connected to the output of the resistor in parallel to the diode also provides protection. A pair of concentric guard rings of first and second conductivity type laterally encompasses the input protection circuit.

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