ESD protection methods and devices using additional terminal...

Details ESD protection methods and devices using additional terminal... ESD protection methods and devices using additional terminal...

2005-05-17

2005-05-17

Sircus, Brian (Department: 2836)

Electricity: electrical systems and devices

Safety and protection of systems and devices

Load shunting by fault responsive means

Reexamination Certificate

active

06894881

ABSTRACT:
In an ESD protection circuit, diodes for shunting current through an ESD clamp include a third terminal in order to provide a dual current path through the diode structure and provide for a voltage drop to the input of the protected internal circuit. In another embodiment, where a bipolar junction transistor is used as an ESD clamp to shunt current to ground between an I/O pad and an input to a protected internal circuit, a lower voltage is provided to the internal circuit by providing a voltage drop across an internal resistive element of the bipolar junction transistor. This is achieved by making use of two base terminals, one connected to the I/O pad, and the other connected to the input of the internal circuit and spaced from the first contact by the base polysilicon region of the bipolar junction transistor.

REFERENCES:
patent: 5430595 (1995-07-01), Wagner et al.
patent: 5565790 (1996-10-01), Lee
patent: 5854504 (1998-12-01), Consiglio
patent: 5859758 (1999-01-01), Kim
patent: 6072219 (2000-06-01), Ker et al.
patent: 6097235 (2000-08-01), Hsu et al.
patent: 6576958 (2003-06-01), Ker et al.

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