ESD protection device using Zener diodes

Details ESD protection device using Zener diodes ESD protection device using Zener diodes

1997-12-22

2000-06-13

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

Avalanche diode

257199, 257482, 257603, 257606, 257355, 257546, H01L 29861, H01L 31107

Patent

active

060752769

ABSTRACT:
A semiconductor device is provided which includes a first conductivity type semiconductor substrate, a second conductivity type Zener region formed in a surface layer of the first conductivity type semiconductor substrate, a first conductivity type anode region formed within the second conductivity type Zener region, an anode electrode which is formed in contact with both of the semiconductor substrate and first conductivity type anode region and is grounded, and a cathode electrode formed on a surface of the second conductivity type Zener region and connected to input and output terminals. A diode that consists of the first conductivity type semiconductor substrate and the second conductivity type Zener region and a diode that consists of the first conductivity type anode region and the second conductivity type Zener region serve as protective elements for preventing electrostatic breakdown of the semiconductor device.

REFERENCES:
patent: 4051504 (1977-09-01), Hile
patent: 4405933 (1983-09-01), Avery
patent: 4599631 (1986-07-01), Tsuzuki
patent: 4626882 (1986-12-01), Cottrell et al.
patent: 4979001 (1990-12-01), Alter
patent: 5500546 (1996-03-01), Marum et al.
patent: 5631493 (1997-05-01), Pezzani

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