ESD protection device structure

Details ESD protection device structure ESD protection device structure

2009-02-04

2010-11-30

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S350000, C257S355000, C257S360000, C257S365000

Reexamination Certificate

active

07842970

ABSTRACT:
An electrostatic discharge (ESD) protective device structure is disclosed. The ESD protection device includes: at least a first conductive type metal-oxide semiconductor (MOS), in which the drain and source of the first conductive type MOS are electrically connected to a first power terminal and a second power terminal separately; at least a second conductive type diffusion region; and at least a dummy gate disposed between the first conductive type MOS and the second conductive type diffusion region, wherein the gate length of the dummy gate is less than the gate length of the first conductive type MOS gate, such that the junction between the second conductive type diffusion region and the drain of the first conductive type MOS have a low breakdown voltage.

REFERENCES:
patent: 6373109 (2002-04-01), Ahn
patent: 6465768 (2002-10-01), Ker et al.
patent: 6690067 (2004-02-01), Ker et al.
patent: 6833568 (2004-12-01), Duvvury
patent: 7071528 (2006-07-01), Ker
patent: 2006/0065933 (2006-03-01), Chu
patent: 2006/0091465 (2006-05-01), Chen

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