ESD protection device in high voltage and manufacturing...

Details ESD protection device in high voltage and manufacturing... ESD protection device in high voltage and manufacturing...

2005-07-22

2009-02-17

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

C438S133000, C438S237000, C438S328000

Reexamination Certificate

active

07491584

ABSTRACT:
Electrostatic discharge (ESD) protection device in high voltage and the relevant manufacturing method is disclosed. The mentioned ESD protection device is disposed to bridge a ground and an input connected with an inner circuit to be protected. In which, the ESD protection device for high voltage comprises at least one PNP transistor and at least one diode connected in parallel, and an ESD discharging path is formed thereby. The PNP transistor is formed with an adjacent heavily doped P-type semiconductor zone (P+), lightly doped N-type semiconductor zone (N−), and a P-type semiconductor substrate. The diode is formed with an adjacent lightly doped N-type semiconductor zone and a light doped P-type semiconductor zone.

REFERENCES:
patent: 6507090 (2003-01-01), Hu et al.
patent: 6542346 (2003-04-01), Chen et al.
patent: 7023676 (2006-04-01), Ker et al.
patent: 7067884 (2006-06-01), Okushima
patent: 2004/0085691 (2004-05-01), Ker et al.

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