ESD protection circuit with SCR structure for semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection

Reexamination Certificate

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Details

C257S115000, C257S123000, C257S355000, C257S536000, C361S056000

Reexamination Certificate

active

07495265

ABSTRACT:
An ESD protection structure has: a first P-type semiconductor region connected to a pad; a first N-type semiconductor region coupled with the first P-type semiconductor region; a second P-type semiconductor region coupled with the first N-type semiconductor region and connected to a ground terminal; a second N-type semiconductor region coupled with the second P-type semiconductor region and connected to a ground terminal; and a trigger circuit configured to draw a trigger current from the first N-type semiconductor region when a surge is applied to the pad. The trigger circuit is connected to the first N-type semiconductor region through a resistive element.

REFERENCES:
patent: 5591992 (1997-01-01), Leach
patent: 5744842 (1998-04-01), Ker
patent: 6469325 (2002-10-01), Ishizuka et al.
patent: 2003/0218841 (2003-11-01), Kodama
patent: 2002-93919 (2002-03-01), None
patent: P2003-203985 (2003-07-01), None
Japanese Office Action dated Aug. 3, 2007 with partial English translation.
Chinese Office Action dated Apr. 4, 2008 with English Translation.

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