Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection
Reexamination Certificate
2006-04-18
2009-02-24
Wojciechowicz, Edward (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Device protection
C257S115000, C257S123000, C257S355000, C257S536000, C361S056000
Reexamination Certificate
active
07495265
ABSTRACT:
An ESD protection structure has: a first P-type semiconductor region connected to a pad; a first N-type semiconductor region coupled with the first P-type semiconductor region; a second P-type semiconductor region coupled with the first N-type semiconductor region and connected to a ground terminal; a second N-type semiconductor region coupled with the second P-type semiconductor region and connected to a ground terminal; and a trigger circuit configured to draw a trigger current from the first N-type semiconductor region when a surge is applied to the pad. The trigger circuit is connected to the first N-type semiconductor region through a resistive element.
REFERENCES:
patent: 5591992 (1997-01-01), Leach
patent: 5744842 (1998-04-01), Ker
patent: 6469325 (2002-10-01), Ishizuka et al.
patent: 2003/0218841 (2003-11-01), Kodama
patent: 2002-93919 (2002-03-01), None
patent: P2003-203985 (2003-07-01), None
Japanese Office Action dated Aug. 3, 2007 with partial English translation.
Chinese Office Action dated Apr. 4, 2008 with English Translation.
McGinn IP Law Group PLLC
NEC Electronics Corporation
Wojciechowicz Edward
LandOfFree
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