ESD protection bipolar device with internal avalanche diode

Details ESD protection bipolar device with internal avalanche diode ESD protection bipolar device with internal avalanche diode

2011-07-05

2011-07-05

Le, Thao X (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

C257SE27053, C438S005000

Reexamination Certificate

active

07973386

ABSTRACT:
In a bipolar device an intrinsic Zener like diode is formed for controlling the triggering voltage and leakage current, the Zener-like diode being formed between the n-collector and the p-base, wherein the collector implant and base diffusion overlap at least partially.

REFERENCES:
patent: 4766469 (1988-08-01), Hill
patent: 5148255 (1992-09-01), Nakazato et al.
patent: 5298788 (1994-03-01), Moreau
patent: 5751054 (1998-05-01), Yilmaz et al.
patent: 2004/0207965 (2004-10-01), Ausserlechner
patent: 2004/0212043 (2004-10-01), Garnett et al.

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