ESD protected integrated capacitor with large capacity

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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Details

C257S360000, C257S356000, C257SE29044, C361S056000

Reexamination Certificate

active

07838965

ABSTRACT:
The integrated capacitor structure comprises a first branch with a first capacitor (60) and a second branch with a second capacitor (70). The second capacitor (70) has a higher capacitance density and a lower breakdown voltage than the first capacitor (60). The first branch has a shorter RC time constant than the second branch, such that a voltage peak will substantially follow the first branch. This first capacitor (60) has a sufficient capacity to store the charge of the voltage peak. In one embodiment, the second capacitor (70) is a stacked capacitor. The structure is suitable for ESD-protection and may, to this end, additionally comprise diodes (21) and resistors (22).

REFERENCES:
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patent: 5225702 (1993-07-01), Chatterjee
patent: 5801065 (1998-09-01), Rizvi et al.
patent: 6064108 (2000-05-01), Martinez
patent: 2004/0155692 (2004-08-01), Ochi
patent: 1351304 (2003-10-01), None
patent: 2000101022 (2000-04-01), None
patent: 198907334 (1989-08-01), None
patent: 200275780 (2002-09-01), None
patent: 2003065458 (2003-08-01), None
patent: 2004057688 (2004-07-01), None
patent: 2006008680 (2006-01-01), None

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