Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-02-27
2010-11-23
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S360000, C257S356000, C257SE29044, C361S056000
Reexamination Certificate
active
07838965
ABSTRACT:
The integrated capacitor structure comprises a first branch with a first capacitor (60) and a second branch with a second capacitor (70). The second capacitor (70) has a higher capacitance density and a lower breakdown voltage than the first capacitor (60). The first branch has a shorter RC time constant than the second branch, such that a voltage peak will substantially follow the first branch. This first capacitor (60) has a sufficient capacity to store the charge of the voltage peak. In one embodiment, the second capacitor (70) is a stacked capacitor. The structure is suitable for ESD-protection and may, to this end, additionally comprise diodes (21) and resistors (22).
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Brand Hans-Wolfgang
Kiewitt Rainer
Klee Mareike
Mauczok Ruediger
Schiebel Ulrich
Le Dung A.
NXP B.V.
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