ESD configuration for low parasitic capacitance I/O

Electricity: electrical systems and devices – Safety and protection of systems and devices – Load shunting by fault responsive means

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C361S091100, C361S111000

Reexamination Certificate

active

07920366

ABSTRACT:
An integrated circuit can include an I/O pad, an internal circuit, an inductor, an electrostatic discharge (ESD) protection circuit, and an ESD clamp. The internal circuit can be biased with a first voltage supply and a second voltage supply, where the internal circuit is connected to the I/O pad at a first node. The ESD protection circuit can be connected between the first node and a second node. The inductor can be connected between the second node and a third voltage supply. Further, the ESD clamp can be connected between the second node and the second voltage supply.

REFERENCES:
patent: 3787717 (1974-01-01), Fischer et al.
patent: 4151425 (1979-04-01), Cappa
patent: 4385337 (1983-05-01), Asano et al.
patent: 4417162 (1983-11-01), Keller et al.
patent: 4423431 (1983-12-01), Sasaki
patent: 4593349 (1986-06-01), Chase et al.
patent: 4674031 (1987-06-01), Siska, Jr.
patent: 4763184 (1988-08-01), Krieger et al.
patent: 4789976 (1988-12-01), Fujishima
patent: 4818903 (1989-04-01), Kawano
patent: 4903329 (1990-02-01), Marik et al.
patent: 5031233 (1991-07-01), Ragan
patent: 5079612 (1992-01-01), Takamoto et al.
patent: 5162888 (1992-11-01), Co et al.
patent: 5180965 (1993-01-01), Nose
patent: 5237395 (1993-08-01), Lee
patent: 5239440 (1993-08-01), Merrill
patent: 5290724 (1994-03-01), Leach
patent: 5329143 (1994-07-01), Chan et al.
patent: 5428829 (1995-06-01), Osburn et al.
patent: 5430595 (1995-07-01), Wagner et al.
patent: 5446302 (1995-08-01), Beigel et al.
patent: 5530612 (1996-06-01), Maloney
patent: 5560022 (1996-09-01), Dunstan et al.
patent: 5574618 (1996-11-01), Croft
patent: 5610790 (1997-03-01), Staab et al.
patent: 5616943 (1997-04-01), Nguyen et al.
patent: 5633825 (1997-05-01), Sakuta et al.
patent: 5654862 (1997-08-01), Worley et al.
patent: 5739587 (1998-04-01), Sato
patent: 5751507 (1998-05-01), Watt et al.
patent: 5752046 (1998-05-01), Oprescu et al.
patent: 5825600 (1998-10-01), Watt
patent: 5828589 (1998-10-01), Degenhardt
patent: 5872379 (1999-02-01), Lee
patent: 5903419 (1999-05-01), Smith
patent: 5917220 (1999-06-01), Waggoner
patent: 5917336 (1999-06-01), Smith et al.
patent: 6011420 (2000-01-01), Watt et al.
patent: 6014039 (2000-01-01), Kothandaraman et al.
patent: 6034400 (2000-03-01), Waggoner et al.
patent: 6046897 (2000-04-01), Smith et al.
patent: 6078068 (2000-06-01), Tamura
patent: 6144542 (2000-11-01), Ker et al.
patent: 6237103 (2001-05-01), Lam et al.
patent: 6246262 (2001-06-01), Morgan
patent: 6317305 (2001-11-01), Dedic
patent: 6345362 (2002-02-01), Bertin et al.
patent: 6437955 (2002-08-01), Duffy et al.
patent: 6509779 (2003-01-01), Yue et al.
patent: 6587321 (2003-07-01), Woo
patent: 6593794 (2003-07-01), Yue et al.
patent: 6597227 (2003-07-01), Yue et al.
patent: 6624999 (2003-09-01), Johnson
patent: 6639771 (2003-10-01), Li
patent: 6671816 (2003-12-01), Woo
patent: 6862161 (2005-03-01), Woo
patent: 6885534 (2005-04-01), Ker et al.
patent: 6963110 (2005-11-01), Woo et al.
patent: 7013402 (2006-03-01), Woo
patent: 7154150 (2006-12-01), Hu et al.
patent: 2006/0125015 (2006-06-01), Woo
patent: 2006/0152870 (2006-07-01), Chen et al.
patent: 3723778 (1988-01-01), None
patent: 195 06 324 (1995-10-01), None
patent: 0 393 717 (1990-10-01), None
patent: 0 431 887 (1991-06-01), None
patent: 0 505 158 (1992-09-01), None
patent: 0 535 536 (1993-04-01), None
patent: 0 663 727 (1995-07-01), None
patent: 2 319 893 (1998-06-01), None
patent: WO 97/09786 (1997-03-01), None
patent: WO 00/21134 (2000-04-01), None
Kwon, K. et al., “A Novel ESD Protection Technique for Submicron CMOS/BiCMOS Technologies,” EOS/ESD Symposium 95-21, pp. 1.3.1-1.3.6 (1995).
International Search Report for Appln. No. PCT/US00/17952, mailed Oct. 19, 2000, 4 pages.
Dallas Semiconductor, Data Sheet For DS1802, Dual Audio Taper Potentiometer With Pushbutton Control, pp. 1-17.
Dallas Semiconductor, Data Sheet for DS1801, Dual Audio Taper Potentiometer, pp. 1-10.
Narita et al., “A Novel On-Chip Electrostatic Discharge (ESD) Protection With Common Discharge Line for High-Speed CMOS LSI's”, IEEE Transactions on Electron Devices, vol. 44, No. 7, pp. 1124-1130, Jul. 7, 1997.
Ker et al., “ESD Protection to Overcome Internal Gate-Oxide Damage on Digital-Analog Interface of Mixed-Mode CMOS IC's”, Proc. 7th Europ. Symp. Reliability of Electron Devices, Failure Physics and Analysis., vol. 36, No. 11/12, pp. 1727-1730, 1996.
Narita et al., “A Novel On-Chip Electrostatic Discharge (ESD) Protection for Beyond 500 MHz DRAM”, IEDM Tech. Dig., pp. 539-542, 1995.
Ker et al., “ESD Buses for Whole-Chip ESD Protection”, Proc. Of IEEE International Symposium on Circuits and Systems, Orlando, Florida, pp. 545-548, May 30-Jun. 2, 1999.
Ker et al., “Whole-Chip ESD Protection Design for Submicron CMOS VLSI”, IEEE International Symposium on Circuits and Systems, Jun. 9-12, 1997, Hong Kong, pp. 1920-1923.
Ker et al., “Whole-Chip ESD Protection Scheme for CMOS Mixed-Mode IC's in Deep-Submicron CMOS Technology”, Proc. Of IEEE Custom Integrated Circuits Conference (CICC), Santa Clara, CA, May 5-8, 1997, pp. 31-34.
Ker et al., “Whole-Chip ESD Protection for CMOS VLSI/ULSI With Multiple Power Pins”, 94 IRW Final Report, pp. 124-128, 1994.
Ker et al., “Whole-Chip ESD Protection Strategy for CMOS IC's With Multiple Mixed-Voltage Power Pins”, Proc. of 1999 International Symposium on VLSI Technology, System, and Application, Taipei, Taiwan, Jun. 8-10, 1999, pp. 298-301.
Ker, Ming-Dou, “Whole-Chip ESD Protection Design With Efficient VDD-to-VSS ESD Clamp Circuits for Submicron CMOS VLSI”, IEEE Transaction on Electron Devices, vol. 46, No. 1, pp. 173-183, Jan. 1999.
Photograph of Dallas Semiconductor DS1801, Dual Audio Taper Potentiometer (1 page).
Photograph of Dallas Semiconductor DS1802, Dual Audio Taper Potentiometer With Pushbutton Control (4 pages).
Ming-Dou Ker, “Tutorial to Design of ESD/Latchup Protection in Submicron CMOS IC's”, VLSI Design Division, Computer & Communication Research Laboratories, Taiwan, Jul. 1997 (111 pages).
Thomas Polgreen, “Tutorial H, Selecting and Implementing the Appropriate ESD Protection Strategy”, Electrostatic Discharge Association, Rome, NY, Oct. 5, 1998 (47 pages).
Thomas Polgreen, Tutorial I, Selecting and Implementing the Appropriate ESD Protection Strategy, Electrostatic Discharge Association, Rome, NY, Sep. 22, 1997 (40 pages).
Poole et al., “A CMOS Subscriber Line Audio Processing Circuit Including Adaptive Balance,” IEEE Proceedings of the International Symposium on Circuits and Systems, US, New York, vol. Conf. 21, 1988, pp. 1931-1934.
N. Weste et al., Principles of CMOS VLSI Design, Addison-Wesley Publishing Co., 1985, pp. 86-87.
International Preliminary Examining Report for International Application No. PCT/US00/00999, mailed Mar. 30, 2001.
Invitation to Pay Additional Fees and attached Partial Search Report, dated May 24, 2000, relating to International Appl. No. PCT/US99/26700.
International Search Report, dated Jul. 18, 2000, for International Appl. No. PCT/US00/00999.
“Special Master's Report and Recommendation on Claim Construction, Part One: The '039, '366, '412 and '712 Patents”,STmicroelectronics, Inc., Plaintiff v.Broadcom Corporation, Defendant, Civil Action No. 4:02-CV-362, The U.S. District Court for The Eastern District of Texas, Sherman Division, Dec. 31, 2003.
“Initial Determination, Administrative Law Judge Sidney Harris”, In the matter of: Certain Power Amplifier Chips Broadband Tuner Chips, Transceiver Chips, and Products Containing Same, Investigation No. 337-TA-490, U.S. International Trade Commission, Washington, DC, Aug. 17, 2004.
Duvvury et al., “ESD Protection: Design and Layout Issues for VLSI Circuits,” IEEE Transactions on Industry Application, vol. 25 No. 1, Jan./Feb. 1989, pp. 41-47.
Keller, J. K., “Protection of MOS Integrated Circuits from Destruction by Electrostatic Discharge,” IIT Research Institut

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

ESD configuration for low parasitic capacitance I/O does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with ESD configuration for low parasitic capacitance I/O, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and ESD configuration for low parasitic capacitance I/O will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2624917

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.