Error recovery for nonvolatile memory

Details Error recovery for nonvolatile memory Error recovery for nonvolatile memory

2006-08-29

2006-08-29

Elms, Richard (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185210, C365S185290

Reexamination Certificate

active

07099194

ABSTRACT:
An error recovery technique is used on marginal nonvolatile memory cells. A marginal memory cell is unreadable because it has a voltage threshold (VT) of less than zero volts. By biasing adjacent memory cells, this will shift the voltage threshold of the marginal memory cells, so that it is a positive value. Then the VT of the marginal memory cell can be determined. The technique is applicable to both binary and multistate memory cells.

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