Error-corrected corpuscular beam lithography

Details Error-corrected corpuscular beam lithography Error-corrected corpuscular beam lithography

1985-01-25

1986-03-25

Smith, Alfred E.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2504911, H01J 37304, H01J 37317

Patent

active

045785872

ABSTRACT:
An apparatus and method for testing transmission masks for corpuscular lithography, in which an image of a portion of mask is guided across a pinhole diaphragm, comprising at least one aperture with submicron dimensions, by inclining the corpuscular beam. The relative spacing of two measuring points is derived from the interferometrically measured table displacement and the beam inclination. This test for geometrical errors is effected by placing below the single hold in the diaphragm a scintillator followed by a photomultiplier coupled to an output circuit.
For testing the entire mask area for errors and impurity particles, a multihole diaphragm, having submicron apertures arranged in matrix fashion, can be used above an integrated circuit of the charge transfer type which provides a MOS capacitor as a particle detector underneath each diaphragm opening. The exposure mask is scanned in steps, effecting several single exposures at each position by inclining the beam.

REFERENCES:
patent: 4169230 (1979-09-01), Bohlen et al.
patent: 4370554 (1983-01-01), Bohlen et al.

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