Amplifiers – Parametric amplifiers – Semiconductor type
Patent
1990-07-31
1991-06-25
Moskowitz, Nelson
Amplifiers
Parametric amplifiers
Semiconductor type
372 6, 372 70, 350 9629, 350 9634, H01S 330, G02B 626
Patent
active
050270796
ABSTRACT:
This invention relates to an Erbium doped fiber amplifier having improved operating characteristics. Parameters which determine the operating characteristics of an erbium doped fiber amplifier are the concentration of erbium in the core of a fiber; the ratio of the radius of the core of the fiber doped with erbium relative to the radius of the core of the fiber, and, the length of the fiber. It is now recognized that improved fiber amplifier performance can be obtained by varying the core-cladding refractive index difference of the fiber. The various parameters are here defined for providing an erbium doped fiber amplifier having optimum gain characteristics.
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Desurvire et al., "Efficient Erbium-Doped . . . Power"; Opt. Lett., vol. 14, #22, 11/15/89, pp. 266-268.
Barnes et al., "High-Quantium-Efficiency . . . 980 nm"; Opt. Lett., vol. 14, #18, 9/15/89. pp. 1002-1004.
Desurvire et al., "High-Gain . . . Fiber Amplifier"; Opt. Lett., vol. 12, #11, 11/87, pp. 888-890.
Laming et al., "Pump Excited-State . . . Fibers"; Opt. Lett., vol. 13, #12, 12/88, pp. 1084-1085.
Desurvire Emmanuel
Giles Clinton R.
Zyskind John L.
AT&T Bell Laboratories
Moskowitz Nelson
Weiss Eli
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