Erasing method for nonvolatile memory

Details Erasing method for nonvolatile memory Erasing method for nonvolatile memory

2011-01-11

2011-01-11

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185300

Reexamination Certificate

active

07869284

ABSTRACT:
The present invention relates to an erasing method for nonvolatile memory, which uses forward bias between the source/drain region and body contact to inject majority carriers into the body, and then accelerates the majority carriers by an electric field between the body and the gate to energize the majority carriers to overcome the oxide barrier and to erase the nonvolatile memory.

REFERENCES:
patent: 7075828 (2006-07-01), Lue et al.
patent: 2003/0117855 (2003-06-01), Lee

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