Erasing method for non-volatile memory

Details Erasing method for non-volatile memory Erasing method for non-volatile memory

2007-07-03

2007-07-03

Mai, Son L. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185140, C365S185170, C365S185290

Reexamination Certificate

active

11308018

ABSTRACT:
An erasing method for a non-volatile memory is provided. The method includes the following two major steps. (a) A first voltage is applied to the odd-numbered select gates of each memory row and a second voltage is applied to the even-numbered select gates of each memory row such that the voltage difference between the first voltage and the second voltage is large enough for the electrons injected into the floating gate of the memory cells to be removed via the select gate. (b) A switchover operation is performed so that the first voltage is applied to the even-numbered select gates of each memory row and the second voltage is applied to the odd-numbered select gates of each memory row such that the electrons injected into the floating gates of the memory cells are pulled away via the select gates to turn the memory cells into an erased state.

REFERENCES:
patent: 5579259 (1996-11-01), Samachisa et al.
patent: 6876031 (2005-04-01), Kao et al.
patent: 6885586 (2005-04-01), Chen et al.
patent: 2004/0232473 (2004-11-01), Hsu et al.
patent: 2005/0169035 (2005-08-01), Hsu et al.
patent: 2005/0207225 (2005-09-01), Chen et al.
patent: 2006/0024887 (2006-02-01), Wong et al.
patent: 2006/0098486 (2006-05-01), Hung et al.
patent: 2006/0114719 (2006-06-01), Lee
patent: 2006/0120155 (2006-06-01), Sato et al.
patent: 2006/0273378 (2006-12-01), Gao et al.
patent: 2007/0045715 (2007-03-01), Sudo et al.

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