Erasing method for non-volatile memory

Details Erasing method for non-volatile memory Erasing method for non-volatile memory

2005-04-19

2005-04-19

Nguyen, Viet Q. (Department: 2818)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185300, C365S218000, C365S185330

Reexamination Certificate

active

06882575

ABSTRACT:
An erasing method for the memory cells of a non-volatile memory is provided. Each memory cell comprises a gate, a source, a drain, an electron-trapping layer and a substrate. The data within the memory cell is erased by applying a first voltage to the control gate, applying a second voltage to the source, applying a third voltage to the drain and applying a fourth voltage to the substrate. The electrons are pulled from the electron-trapping layer into the channel by negative gate F-N tunneling effect.

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