Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2005-11-01
2005-11-01
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S040000, C257S481000, C438S584000, C438S624000, C438S627000, C438S597000, C438S257000, C438S652000, C438S653000, C438S674000, C438S780000
Reexamination Certificate
active
06960783
ABSTRACT:
An organic memory cell made of two electrodes with a selectively conductive media between the two electrodes is disclosed. The selectively conductive media contains an organic layer and passive layer. The selectively conductive media is programmed by applying bias voltages that program a desired impedance state for a memory cell. The desired impedance state represents one or more bits of information and the memory cell does not require constant power or refresh cycles to maintain the desired impedance state. Furthermore, the selectively conductive media is read by applying a current and reading the impedance of the media in order to determine the impedance state of the memory cell. Methods of making the organic memory devices/cells, methods of using the organic memory devices/cells, and devices such as computers containing the organic memory devices/cells are also disclosed.
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Bill Colin
Lan Zhida
VanBuskirk Michael A.
Advanced Micro Devices , Inc.
Amin & Turocy LLP
Nelms David
Tran Mai-Huong
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