Erase voltage manipulation in non-volatile memory for...

Details Erase voltage manipulation in non-volatile memory for... Erase voltage manipulation in non-volatile memory for...

2007-07-05

2008-11-25

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185220, C365S218000, C365S185180

Reexamination Certificate

active

07457166

ABSTRACT:
The erase voltage applied to a set of non-volatile storage elements being erased is structured to provide controlled shifts in the threshold voltage of the storage elements. The erase voltage is applied as a series of voltage pulses, when necessary, to shift the threshold voltage of to-be-erased memory cells below a verify level indicative of an erased condition. To avoid over-erasing the memory cells, the second erase voltage pulse is decreased, or not increased, in magnitude when compared to the previously applied voltage pulse. By decreasing or not increasing the size of the erase voltage, the amount of charge transferred from the cells by the second pulse is controlled to more accurately position an erased threshold voltage distribution for the cells near the verify level. Subsequent erase voltage pulses are increased in magnitude to provide further erasing when needed.

REFERENCES:
patent: 4489400 (1984-12-01), Southerland, Jr.
patent: 4580247 (1986-04-01), Adam
patent: 5293337 (1994-03-01), Aritome et al.
patent: 5428568 (1995-06-01), Kobayashi et al.
patent: 5491809 (1996-02-01), Coffman et al.
patent: 5555204 (1996-09-01), Endoh et al.
patent: 5570315 (1996-10-01), Tanaka et al.
patent: 5576993 (1996-11-01), Hong
patent: 5652719 (1997-07-01), Tanaka et al.
patent: 5768188 (1998-06-01), Park et al.
patent: 5774397 (1998-06-01), Endoh et al.
patent: 5808338 (1998-09-01), Gotou
patent: 5841721 (1998-11-01), Kwon et al.
patent: 5946231 (1999-08-01), Endoh et al.
patent: 5963477 (1999-10-01), Hung
patent: 5978270 (1999-11-01), Tanaka et al.
patent: 5995417 (1999-11-01), Chen et al.
patent: 6031760 (2000-02-01), Sakui et al.
patent: 6041001 (2000-03-01), Estakhri
patent: 6046935 (2000-04-01), Takeuchi et al.
patent: 6046940 (2000-04-01), Takeuchi et al.
patent: 6108238 (2000-08-01), Nakamura et al.
patent: 6130841 (2000-10-01), Tanaka et al.
patent: 6134140 (2000-10-01), Tanaka et al.
patent: 6166962 (2000-12-01), Chen et al.
patent: 6185134 (2001-02-01), Tanaka
patent: 6198662 (2001-03-01), Chen et al.
patent: 6222773 (2001-04-01), Tanzawa et al.
patent: 6249459 (2001-06-01), Chen et al.
patent: 6353556 (2002-03-01), Chen et al.
patent: 6381174 (2002-04-01), Roohparvar et al.
patent: 6421276 (2002-07-01), Goltman
patent: 6452840 (2002-09-01), Sunkavalli et al.
patent: 6483751 (2002-11-01), Chen et al.
patent: 6519184 (2003-02-01), Tanaka et al.
patent: 6525964 (2003-02-01), Tanaka et al.
patent: 6529413 (2003-03-01), Lee et al.
patent: 6594178 (2003-07-01), Choi et al.
patent: 6618288 (2003-09-01), Akaogi et al.
patent: 6620682 (2003-09-01), Lee et al.
patent: 6643181 (2003-11-01), Sofer et al.
patent: 6643183 (2003-11-01), Atsumi et al.
patent: 6643184 (2003-11-01), Pio
patent: 6643188 (2003-11-01), Tanaka et al.
patent: 6646920 (2003-11-01), Takashina et al.
patent: 6664587 (2003-12-01), Guterman et al.
patent: 6704222 (2004-03-01), Guterman et al.
patent: 6711066 (2004-03-01), Tanzawa et al.
patent: 6744670 (2004-06-01), Tamada et al.
patent: 6771541 (2004-08-01), Park
patent: 6807100 (2004-10-01), Tanaka
patent: 6818491 (2004-11-01), Lee et al.
patent: 6842380 (2005-01-01), Lakhani et al.
patent: 6859397 (2005-02-01), Lutze et al.
patent: 6862223 (2005-03-01), Lee et al.
patent: 6894931 (2005-05-01), Yaegashi et al.
patent: 6954378 (2005-10-01), Tanaka
patent: 7009889 (2006-03-01), Tran et al.
patent: 7057936 (2006-06-01), Yaegashi et al.
patent: 7079437 (2006-07-01), Hazama et al.
patent: 7102929 (2006-09-01), Lee et al.
patent: 2002/0133679 (2002-09-01), Choi et al.
patent: 2003/0123296 (2003-07-01), Hirano
patent: 2003/0147278 (2003-08-01), Tanaka et al.
patent: 2003/0189864 (2003-10-01), Sim
patent: 2004/0141378 (2004-07-01), Tanzawa
patent: 2005/0041515 (2005-02-01), Futatsuyama et al.
patent: 2005/0105373 (2005-05-01), Takase et al.
patent: 2005/0128805 (2005-06-01), Lee et al.
patent: 2005/0265097 (2005-12-01), Tanaka et al.
patent: 2006/0114729 (2006-06-01), Tanaka et al.
patent: 2006/0140012 (2006-06-01), Wan et al.
patent: 2006/0221660 (2006-10-01), Hemink et al.
patent: 2006/0221661 (2006-10-01), Hemink et al.
patent: 2006/0221703 (2006-10-01), Higashitani
patent: 2006/0221705 (2006-10-01), Hemink et al.
patent: 2006/0221708 (2006-10-01), Higashitani
patent: 2006/0221709 (2006-10-01), Hemink et al.
patent: 2006/0279992 (2006-12-01), Park et al.
patent: 2006/0285387 (2006-12-01), Micheloni et al.
patent: WO0024002 (2000-04-01), None
patent: WO2004013864 (2004-02-01), None
Tetsuo Endoh, et al., “A Study of High-Performance NAND Structured EEPROMS,” IEICE Transactions on Electronics, Electronics Society, Tokyo, Japan, vol. E75-C, No. 11, Nov. 1, 1992, pp. 1351-1356.
U.S. Appl. No. 11/549,515, filed Oct. 13, 2006.
U.S. Appl. No. 11/549,533, filed Oct. 13, 2006.
U.S. Appl. No. 11/549,553, filed Oct. 13, 2006.
U.S. Appl. No. 11/549,564, filed Oct. 13, 2006.
U.S. Appl. No. 11/773,927, filed Jul. 5, 2007.
Notice of Allowance and Fee(s) Due, United States & Trademark Office, U.S. Appl. No. 11/773,927 filed on Jul. 5, 2007, Sep. 9, 2008.

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