Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2011-01-04
2011-01-04
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185180, C365S185220, C365S185290
Reexamination Certificate
active
07864583
ABSTRACT:
Various embodiments include memory devices and methods having first memory cells and second memory cells coupled to the first memory cells in a string arrangement, first word lines configured to apply a first voltage to gates of the first memory cells during a verify operation of the first memory cells, and second word lines configured to apply a second voltage to gates of the second memory cells during the verify operation.
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“U.S. Appl. No. 11/619,978, Notice of Allowance mailed Apr. 10, 2008”, 5 pgs.
Bartoll Simone
Passerini Marco
Surico Stefano
Tassan Caser Fablo
Atmel Corporation
Nguyen Tan T.
Schwegman Lundberg & Woessner, P.A.
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