Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-07-12
2011-07-12
Hur, J. H. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185030, C365S185300, C365S185240
Reexamination Certificate
active
07978532
ABSTRACT:
Erase and program methods of a flash memory device including MLCs for increasing the program speed. In the erase method, MLCs are pre-programmed so that a voltage range in which threshold voltages of MLCs are distributed can be reduced. Therefore, a fail occurrence ratio can be reduced when erasing MLCs, the threshold voltage distribution of MLCs can be improved and an overall program time can be shortened in a subsequent program operation.
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Hwang Kyung Pil
Joo Seok Jin
Kim Hyung Seok
Kim Ju In
Kim Sook Kyung
Hur J. H.
Hynix / Semiconductor Inc.
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