Erase method and soft programming method of non-volatile...

Details Erase method and soft programming method of non-volatile... Erase method and soft programming method of non-volatile...

2008-06-03

2010-12-21

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170, C365S185220

Reexamination Certificate

active

07855921

ABSTRACT:
An erase method and a soft programming method of a non-volatile memory device includes performing an erase operation on a memory cell block; applying a pass voltage to a memory cell adjacent to a select transistor of the memory cell block; applying a soft program voltage to the remaining memory cells of the memory cell block; and performing a soft program operation.

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patent: 7672170 (2010-03-01), Lee et al.
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patent: 2007/0183220 (2007-08-01), Aritome
patent: 10-2006-0107697 (2006-10-01), None
patent: 1020070045308 (2007-05-01), None
Office Action dated Sep. 30, 2009, for Korean application No. 10-2007-0140147.
The Notice of Allowance to the Korean Patent Application No. 10-2007-0140147, Dec. 28, 2009, 2 pages, KIPA, Korea.

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