Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-06-03
2010-12-21
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185170, C365S185220
Reexamination Certificate
active
07855921
ABSTRACT:
An erase method and a soft programming method of a non-volatile memory device includes performing an erase operation on a memory cell block; applying a pass voltage to a memory cell adjacent to a select transistor of the memory cell block; applying a soft program voltage to the remaining memory cells of the memory cell block; and performing a soft program operation.
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Office Action dated Sep. 30, 2009, for Korean application No. 10-2007-0140147.
The Notice of Allowance to the Korean Patent Application No. 10-2007-0140147, Dec. 28, 2009, 2 pages, KIPA, Korea.
Ho Hoai V
Hynix / Semiconductor Inc.
Lappas Jason
Lowe Hauptman & Ham & Berner, LLP
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