Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-09-08
2008-05-27
Luu, Pho M. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185170, C365S185180, C365S185250
Reexamination Certificate
active
07379346
ABSTRACT:
A non-volatile memory and method for its operation that can reduce the amount of disturb in non-selected cells during an erase process are presented. For a set of storage elements formed over a common well structure, all word-lines are initially charged with the same high voltage erase signal that charges the well to insure there is no net voltage difference between the well and word-lines. The selected word-lines are then discharged to ground while the non-selected word-lines and the well are maintained at the high voltage. This can be accomplished without increasing any pitch area circuit or adding new wires in the memory array, and at minimal additional peripheral area. Advantages include less potential erase disturb in the non-selected storage elements and a tighter erase distribution for the selected elements.
REFERENCES:
patent: 6373746 (2002-04-01), Takeuchi et al.
patent: 6442080 (2002-08-01), Tanzawa et al.
patent: 6522580 (2003-02-01), Chen et al.
patent: 6958936 (2005-10-01), Quader et al.
patent: 2002/0167844 (2002-11-01), Han et al.
patent: 1 271 553 (2003-01-01), None
Examiner's Report for European Patent Application No. 04 788 913.4 for SanDisk Corporation, dated Aug. 10, 2006, 3 pages.
International Search Report, International Application No. PCT/US2004/031082, mailed Jan. 28, 2005, 3 pages.
Written Opinion of the International Searching Authority, International Application No. PCT/US2004/031082, mailed Jan. 28, 2005, 6 pages.
Davis , Wright, Tremaine, LLP
Luu Pho M.
LandOfFree
Erase inhibit in non-volatile memories does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Erase inhibit in non-volatile memories, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Erase inhibit in non-volatile memories will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3982006