Static information storage and retrieval – Floating gate – Particular biasing
Patent
1991-07-15
1993-03-30
LaRoche, Eugene R.
Static information storage and retrieval
Floating gate
Particular biasing
36518909, 36518911, G11C 1134
Patent
active
051989980
ABSTRACT:
A read only semiconductor memory includes a memory cell matrix including a number of floating-gate type erasable programmable memory cells. A column selector being connected between a plurality of column lines of the memory cell matrix and a writing circuit and a sense amplifier. A column decoder has a plurality of outputs each being connected through a corresponding transfer gate to the column selector and also being pulled up to a high voltage. A row decoder has a plurality of outputs each being outputted through a corresponding transfer gate to a corresponding one of row lines of memory cell matrix and also being pulled up to a high voltage to the outputs of the row decoder. Each of the transfer gates is formed of an enhancement type or a substrate-V.sub.T type field effect transistor. A control circuit including a pump-up circuit receives a control signal for supplying a gate voltage signal to gates of all the field effect transistors.
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LaRoche Eugene R.
NEC Corporation
Yoo Do Hyun
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