Erasable optical memory employing a marmen alloy to effect phase

Dynamic information storage or retrieval – Specific detail of information handling portion of system – Radiation beam modification of or by storage medium

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369284, 369286, 365113, 365114, 365127, 346137, G11B 700, G11B 722

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active

047747021

ABSTRACT:
A portion of a chalcogenide transformation film in a less reflective phase responds to a low energy laser beam writing pulse by transforming to a crystalline phase. A marmem alloy, secured to the bottom side of the film, responds to a longer erasing pulse of a lower energy laser beam at the same portion by physically stressing the film only at that same portion. The film portion responds to the physical stress by transforming back to a less reflective phase. An optical reader interprets the crystalline phase as a digital logic "1", and the less reflective phase as a digital logic "0".

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"Reversible Recording of Holograms in Glassy Chalcogenide Semiconductors in Elevated Temperatures"; Kaincitouskii et al., 800.J. Quant. Electron, vol. 6, No. 1, Jan. 1976, p. 121.sup.+.
"Injection Laser Writing on Chalcogenide Films"; Smith, Applied Optics, vol. 13, No. 4, Apr. 1974, pp. 795-798.

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