Erasable electrically programmable read only memory cell using t

Details Erasable electrically programmable read only memory cell using t Erasable electrically programmable read only memory cell using t

1988-07-11

1990-12-04

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 52, H01L 2994

Patent

active

049753843

ABSTRACT:
An electrically programmable read only memory cell formed in a face of a semiconductor substrate which includes a floating gate transistor having a floating gate and a control gate formed at least partially in a trench in the substrate. The trench has bottom corners sufficiently sharp so as to enhance the likelihood of tunnelling between corner regions of the trench and the floating gate over that between planar surface regions of the trench and floating gate.

REFERENCES:
patent: 4222063 (1980-09-01), Rodgers
patent: 4364074 (1982-12-01), Garnache et al.
patent: 4502208 (1985-03-01), McPherson

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