Erasable and programmable non-volatile cell

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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C365S156000, C257S318000

Reexamination Certificate

active

10520340

ABSTRACT:
An erasable and programmable non-volatile cell, comprising a first transistor having a source, a drain and a gate; a floating capacitor having a floating gate and a control gate, said floating gate being connected to said gate of said first transistor; and means to detect the state, whether erased or programmed, of the cell; is characterized in that said means to detect the state of the cell comprises a second transistor having a source, a drain and a gate, said second transistor being complementary to said first transistor and said gate of said second transistor being connected to said floating gate.

REFERENCES:
patent: 5615150 (1997-03-01), Lin et al.
patent: 5646901 (1997-07-01), Sharpe-Geisler et al.
patent: 6088262 (2000-07-01), Nasu
patent: 6704221 (2004-03-01), Killat
patent: 2002/0180691 (2002-12-01), Wong et al.
patent: 1 306 854 (2003-05-01), None

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