Equipment for producing thin-film solar cell

Classifying – separating – and assorting solids – Sifting – Drum sifters

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20429813, 20419112, C23C 1434

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active

060926694

ABSTRACT:
A thin-film light absorbing layer which is regulated so as to have any desired gallium concentration and which is capable of attaining a high open-circuit voltage is formed by a simple method at a temperature lower than the softening point of the soda-lime float glass. A light absorbing layer is formed by forming a back electrode on a soda-lime float glass substrate, forming on the back electrode layer a stacked precursor film including a copper-gallium alloy layer and an indium layer by sputtering, and then heating the precursor film in an atmosphere of selenium and/or sulfur.

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Katsumi Kushiya et al., 25.sup.th IEEE Photovoltaics Specialists Conference, "The Role of Cu(InGa) (SeS).sub.2 Surface Layer On A Graded Band-Gap Cu(InGa)Se.sub.2 Thin-Film Solar Cell Prepared By Two-Stage Method", May 13-17, 1996.
Kushiya, K., et al: "Development of Cu(InGa)Se.sub.2 Thin-Film Solar Cells with Zn-Compound Buffer", 13.sup.th European Photovoltaic Solar Energy Conference Proceedings, Oct. 23-27, 1995, pp. 2016-2019, XP002092401.
Neelkanth, G.D. and Lynn, K. W.: "Gallium Content Enhancement in CuIn.sub.1-x Ga.sub.x Se.sub.2 Thin Films Prepared by Two-Selenizations Process Using Se Vapor", Twenty Fifth IEEE Photovoltaic Specialists Conference Proceedings, May 13-17, 1996, pp. 897-900, XP002092407.

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